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| IRF460 TO-3 (TO-204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) VDSS ID(cont) RDS(on) 500V 21A 0.27 29.9 (1.177) 30.4 (1.197) Pin 1 - Gate 16.64 (0.655) 17.15 (0.675) Pin 2 - Source Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Total Power Dissipation @ Tcase = 25C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. 500 21 84 20 300 2.4 -55 to 150 300 V A A V W W/C C STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 1mA VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 20V , VDS = 0V VDS = VGS , ID = 250A VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 13A VGS = 10V , ID = 21A 2 21 0.27 0.31 Min. 500 Typ. Max. Unit V 25 250 100 4 A nA V A 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 11/98 IRF460 DYNAMIC CHARACTERISTICS Characteristic Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 Min. Typ. 2890 590 230 140 18 75 19 43 85 56 190 27 135 35 120 130 98 ns nC pF Max. Unit SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/s IS = - ID [Cont.] , dls / dt = 100A/s Min. Typ. Max. Unit 21 A 84 1.8 580 8.1 V ns C THERMAL CHARACTERISTICS RJC RJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 Min. Typ. Max. Unit 0.42 C/W 30 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk Website http://www.semelab.co.uk Prelim. 11/98 |
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